2N6387G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6387G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
2W
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6387
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 3V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 100mA, 10A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
20MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
15.748mm
Length
10.2616mm
Width
4.826mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.97000
$0.97
50
$0.80420
$40.21
100
$0.66020
$66.02
500
$0.52648
$263.24
1,000
$0.42551
$0.42551
2N6387G Product Details
2N6387G Overview
In this device, the DC current gain is 1000 @ 5A 3V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 20MHz.A maximum collector current of 10A volts can be achieved.
2N6387G Features
the DC current gain for this device is 1000 @ 5A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 100mA, 10A the emitter base voltage is kept at 5V the current rating of this device is 10A a transition frequency of 20MHz
2N6387G Applications
There are a lot of ON Semiconductor 2N6387G applications of single BJT transistors.