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2N6387G

2N6387G

2N6387G

ON Semiconductor

2N6387G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6387G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation2W
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating10A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6387
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 3V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Collector Emitter Breakdown Voltage60V
Transition Frequency 20MHz
Collector Emitter Saturation Voltage2V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 15.748mm
Length 10.2616mm
Width 4.826mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6855 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.97000$0.97
50$0.80420$40.21
100$0.66020$66.02
500$0.52648$263.24

2N6387G Product Details

2N6387G Overview


In this device, the DC current gain is 1000 @ 5A 3V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 20MHz.A maximum collector current of 10A volts can be achieved.

2N6387G Features


the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 20MHz

2N6387G Applications


There are a lot of ON Semiconductor 2N6387G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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