NSS12200WT1G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 800mA 1.5 V.The collector emitter saturation voltage is -170mV, which allows for maximum design flexibility.A VCE saturation (Max) of 290mV @ 20mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -5V allows for a high level of efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 100MHz in the part.The breakdown input voltage is 12V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

NSS12200WT1G Features

the DC current gain for this device is 100 @ 800mA 1.5 V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 290mV @ 20mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 100MHz

NSS12200WT1G Applications

There are a lot of ON Semiconductor NSS12200WT1G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter