NSS35200MR6T1G Overview
DC current gain in this device equals 100 @ 1.5A 1.5V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -260mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.The breakdown input voltage is 35V volts.During maximum operation, collector current can be as low as 2A volts.
NSS35200MR6T1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
NSS35200MR6T1G Applications
There are a lot of ON Semiconductor NSS35200MR6T1G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
