CZT5551 TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CZT5551 TR PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Configuration
Single
Power - Max
2W
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
160V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
100MHz
Frequency - Transition
300MHz
Power Dissipation-Max (Abs)
2W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.29000
$1.29
500
$1.2771
$638.55
1000
$1.2642
$1264.2
1500
$1.2513
$1876.95
2000
$1.2384
$2476.8
2500
$1.2255
$3063.75
CZT5551 TR PBFREE Product Details
CZT5551 TR PBFREE Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.The part has a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 160V maximal voltage is present.
CZT5551 TR PBFREE Features
the DC current gain for this device is 80 @ 10mA 5V the vce saturation(Max) is 200mV @ 5mA, 50mA a transition frequency of 100MHz
CZT5551 TR PBFREE Applications
There are a lot of Central Semiconductor Corp CZT5551 TR PBFREE applications of single BJT transistors.