2N6426RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30000 @ 100mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.Emitter base voltages of 12V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.A transition frequency of 125MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
2N6426RLRAG Features
the DC current gain for this device is 30000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 125MHz
2N6426RLRAG Applications
There are a lot of ON Semiconductor 2N6426RLRAG applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
