2N6427RLRAG Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20000 @ 100mA 5V.The collector emitter saturation voltage is 1.2V, which allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 500μA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.Keeping the emitter base voltage at 12V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.Collector current can be as low as 500mA volts at its maximum.

2N6427RLRAG Features

the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA

2N6427RLRAG Applications

There are a lot of ON Semiconductor 2N6427RLRAG applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver