2N6518TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6518TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N6518
Power - Max
625mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 50mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
250V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
200MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.05000
$0.05
500
$0.0495
$24.75
1000
$0.049
$49
1500
$0.0485
$72.75
2000
$0.048
$96
2500
$0.0475
$118.75
2N6518TA Product Details
2N6518TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.This product comes in a TO-92-3 device package from the supplier.Collector Emitter Breakdown occurs at 250VV - Maximum voltage.
2N6518TA Features
the DC current gain for this device is 45 @ 50mA 10V the vce saturation(Max) is 1V @ 5mA, 50mA the supplier device package of TO-92-3
2N6518TA Applications
There are a lot of ON Semiconductor 2N6518TA applications of single BJT transistors.