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2N6518TA

2N6518TA

2N6518TA

ON Semiconductor

2N6518TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6518TA Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N6518
Power - Max 625mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 250V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 200MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.05000 $0.05
500 $0.0495 $24.75
1000 $0.049 $49
1500 $0.0485 $72.75
2000 $0.048 $96
2500 $0.0475 $118.75
2N6518TA Product Details

2N6518TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.This product comes in a TO-92-3 device package from the supplier.Collector Emitter Breakdown occurs at 250VV - Maximum voltage.

2N6518TA Features


the DC current gain for this device is 45 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
the supplier device package of TO-92-3

2N6518TA Applications


There are a lot of ON Semiconductor 2N6518TA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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