2N6520TA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 50mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.The emitter base voltage can be kept at -5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.This device can take an input voltage of 350V volts before it breaks down.In extreme cases, the collector current can be as low as 500mA volts.

2N6520TA Features

the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 40MHz

2N6520TA Applications

There are a lot of ON Semiconductor 2N6520TA applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver