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2N7002KT1G

2N7002KT1G

2N7002KT1G

ON Semiconductor

2N7002KT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

2N7002KT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.6Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation420mW
Turn On Delay Time12.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 24.5pF @ 20V
Current - Continuous Drain (Id) @ 25°C 320mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Rise Time9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 55.8 ns
Continuous Drain Current (ID) 380mA
Threshold Voltage 2.3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2.3 V
Feedback Cap-Max (Crss) 5 pF
Height 1.11mm
Length 3.04mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:35019 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.24000$0.24
500$0.2376$118.8
1000$0.2352$235.2
1500$0.2328$349.2
2000$0.2304$460.8
2500$0.228$570

2N7002KT1G Product Details

2N7002KT1G Description

The N-channel Small Signal MOSFET 2N7002KT1G has a drain-source voltage of 60V and a steady-state drain current of 320mA. It can be used in low-side load switches, level shift circuits, DC-to-DC converters, portable DSCs, and PDAs.


2N7002KT1G Features

  • ESD Protected

  • Low RDS(on)

  • Surface Mount Package

  • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • These Devices are Pb?Free, Halogen Free/BFR Free, and are RoHS Compliant


2N7002KT1G Applications

  • Low Side Load Switch

  • Level Shift Circuits

  • DC?DC Converter

  • Portable Applications i.e. DSC, PDA, Cell Phone, etc.


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