2SA1552S-TL-E Overview

DC current gain in this device equals 140 @ 100mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Single BJT transistor can take a breakdown input voltage of 160V volts.The maximum collector current is 1.5A volts.

2SA1552S-TL-E Features

the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V

2SA1552S-TL-E Applications

There are a lot of ON Semiconductor 2SA1552S-TL-E applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver