BC847BT TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
BC847BT TR PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
250mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.44000
$0.44
500
$0.4356
$217.8
1000
$0.4312
$431.2
1500
$0.4268
$640.2
2000
$0.4224
$844.8
2500
$0.418
$1045
BC847BT TR PBFREE Product Details
BC847BT TR PBFREE Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 100mA.The device exhibits a collector-emitter breakdown at 45V.
BC847BT TR PBFREE Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 400mV @ 5mA, 100mA
BC847BT TR PBFREE Applications
There are a lot of Central Semiconductor Corp BC847BT TR PBFREE applications of single BJT transistors.