Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FMMT591ATA

FMMT591ATA

FMMT591ATA

Diodes Incorporated

FMMT591ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT591ATA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation500mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-1A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT591A
Pin Count3
Number of Elements 1
Voltage 40V
Element ConfigurationSingle
Current 1A
Power Dissipation500mW
Gain Bandwidth Product150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage40V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1A
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18624 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FMMT591ATA Product Details

FMMT591ATA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).For high efficiency, the continuous collector voltage must be kept at -1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 40V volts.The maximum collector current is 1A volts.

FMMT591ATA Features


the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz

FMMT591ATA Applications


There are a lot of Diodes Incorporated FMMT591ATA applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News