FMMT591ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT591ATA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT591A
Pin Count
3
Number of Elements
1
Voltage
40V
Element Configuration
Single
Current
1A
Power Dissipation
500mW
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-1A
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FMMT591ATA Product Details
FMMT591ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).For high efficiency, the continuous collector voltage must be kept at -1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 40V volts.The maximum collector current is 1A volts.
FMMT591ATA Features
the DC current gain for this device is 300 @ 100mA 5V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 150MHz
FMMT591ATA Applications
There are a lot of Diodes Incorporated FMMT591ATA applications of single BJT transistors.