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FMMT591ATA

FMMT591ATA

FMMT591ATA

Diodes Incorporated

FMMT591ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT591ATA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT591A
Pin Count 3
Number of Elements 1
Voltage 40V
Element Configuration Single
Current 1A
Power Dissipation 500mW
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1A
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.14494 $0.43482
6,000 $0.13706 $0.82236
15,000 $0.12919 $1.93785
30,000 $0.12000 $3.6
FMMT591ATA Product Details

FMMT591ATA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).For high efficiency, the continuous collector voltage must be kept at -1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 40V volts.The maximum collector current is 1A volts.

FMMT591ATA Features


the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz

FMMT591ATA Applications


There are a lot of Diodes Incorporated FMMT591ATA applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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