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PMSTA42,115

PMSTA42,115

PMSTA42,115

Nexperia USA Inc.

PMSTA42,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMSTA42,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 50MHz
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
hFE Min 25
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.531680 $4.53168
10 $4.275170 $42.7517
100 $4.033179 $403.3179
500 $3.804886 $1902.443
1000 $3.589515 $3589.515
PMSTA42,115 Product Details

PMSTA42,115 Overview


This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.In this part, there is a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 100mA volts can be achieved.

PMSTA42,115 Features


the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 50MHz

PMSTA42,115 Applications


There are a lot of Nexperia USA Inc. PMSTA42,115 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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