PMSTA42,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMSTA42,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
50MHz
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
6V
hFE Min
25
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.531680
$4.53168
10
$4.275170
$42.7517
100
$4.033179
$403.3179
500
$3.804886
$1902.443
1000
$3.589515
$3589.515
PMSTA42,115 Product Details
PMSTA42,115 Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.In this part, there is a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 100mA volts can be achieved.
PMSTA42,115 Features
the DC current gain for this device is 40 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 6V a transition frequency of 50MHz
PMSTA42,115 Applications
There are a lot of Nexperia USA Inc. PMSTA42,115 applications of single BJT transistors.