BF823,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BF823,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
60MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BF823
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Gain Bandwidth Product
60MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 25mA 20V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 5mA, 30mA
Collector Emitter Breakdown Voltage
250V
Transition Frequency
60MHz
Max Breakdown Voltage
250V
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
5V
VCEsat-Max
0.8 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.114120
$0.11412
10
$0.107660
$1.0766
100
$0.101566
$10.1566
500
$0.095817
$47.9085
1000
$0.090394
$90.394
BF823,215 Product Details
BF823,215 Overview
DC current gain in this device equals 50 @ 25mA 20V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 5mA, 30mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Parts of this part have transition frequencies of 60MHz.The breakdown input voltage is 250V volts.In extreme cases, the collector current can be as low as 50mA volts.
BF823,215 Features
the DC current gain for this device is 50 @ 25mA 20V the vce saturation(Max) is 800mV @ 5mA, 30mA the emitter base voltage is kept at 5V a transition frequency of 60MHz
BF823,215 Applications
There are a lot of Nexperia USA Inc. BF823,215 applications of single BJT transistors.