BCX19LT1G Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 620mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 620mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.Single BJT transistor can be broken down at a voltage of 45V volts.In extreme cases, the collector current can be as low as 500mA volts.
BCX19LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
BCX19LT1G Applications
There are a lot of ON Semiconductor BCX19LT1G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
