MJW21192 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJW21192 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
125W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 4A 2V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-247AE
Vce Saturation (Max) @ Ib, Ic
2V @ 1.6A, 8A
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
8A
Transition Frequency
4MHz
Frequency - Transition
4MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.84000
$0.84
500
$0.8316
$415.8
1000
$0.8232
$823.2
1500
$0.8148
$1222.2
2000
$0.8064
$1612.8
2500
$0.798
$1995
MJW21192 Product Details
MJW21192 Overview
DC current gain in this device equals 15 @ 4A 2V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 1.6A, 8A.There is a transition frequency of 4MHz in the part.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MJW21192 Features
the DC current gain for this device is 15 @ 4A 2V the vce saturation(Max) is 2V @ 1.6A, 8A a transition frequency of 4MHz
MJW21192 Applications
There are a lot of Rochester Electronics, LLC MJW21192 applications of single BJT transistors.