2SB1124T-TD-H Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 100mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.A maximum collector current of 3A volts can be achieved.
2SB1124T-TD-H Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 150MHz
2SB1124T-TD-H Applications
There are a lot of ON Semiconductor 2SB1124T-TD-H applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
