2SB1143T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SB1143T Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2003
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
1.5W
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Max Frequency
150MHz
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-700mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Continuous Collector Current
4A
Height
11mm
Length
8mm
Width
3.3mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.32000
$0.32
500
$0.3168
$158.4
1000
$0.3136
$313.6
1500
$0.3104
$465.6
2000
$0.3072
$614.4
2500
$0.304
$760
2SB1143T Product Details
2SB1143T Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 2A.Continuous collector voltage should be kept at 4A for high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a breakdown input voltage of 50V volts that it can take.When collector current reaches its maximum, it can reach 4A volts.
2SB1143T Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of -700mV the vce saturation(Max) is 700mV @ 100mA, 2A the emitter base voltage is kept at 6V a transition frequency of 150MHz
2SB1143T Applications
There are a lot of ON Semiconductor 2SB1143T applications of single BJT transistors.