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2SB1143T

2SB1143T

2SB1143T

ON Semiconductor

2SB1143T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SB1143T Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2003
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 1.5W
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 50V
Max Frequency 150MHz
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -700mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Continuous Collector Current 4A
Height 11mm
Length 8mm
Width 3.3mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.32000 $0.32
500 $0.3168 $158.4
1000 $0.3136 $313.6
1500 $0.3104 $465.6
2000 $0.3072 $614.4
2500 $0.304 $760
2SB1143T Product Details

2SB1143T Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 2A.Continuous collector voltage should be kept at 4A for high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a breakdown input voltage of 50V volts that it can take.When collector current reaches its maximum, it can reach 4A volts.

2SB1143T Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

2SB1143T Applications


There are a lot of ON Semiconductor 2SB1143T applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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