2SB1203S-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SB1203S-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
1999
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
1W
Reach Compliance Code
not_compliant
Base Part Number
2SB1203
Pin Count
3
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
550mV @ 150mA, 3A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
130MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
-6V
hFE Min
70
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.369474
$0.369474
10
$0.348560
$3.4856
100
$0.328830
$32.883
500
$0.310217
$155.1085
1000
$0.292658
$292.658
2SB1203S-E Product Details
2SB1203S-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 500mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 150mA, 3A.With the emitter base voltage set at -6V, an efficient operation can be achieved.In extreme cases, the collector current can be as low as 5A volts.
2SB1203S-E Features
the DC current gain for this device is 140 @ 500mA 2V the vce saturation(Max) is 550mV @ 150mA, 3A the emitter base voltage is kept at -6V
2SB1203S-E Applications
There are a lot of ON Semiconductor 2SB1203S-E applications of single BJT transistors.