CP591X-2N2907A-CT20 Overview

This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor comes in a supplier device package of Die.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

CP591X-2N2907A-CT20 Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of Die

CP591X-2N2907A-CT20 Applications

There are a lot of Central Semiconductor Corp CP591X-2N2907A-CT20 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver