Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MMBT5551LT1G

  • MMBT5551LT1G
  • MMBT5551LT1G

MMBT5551LT1G

MMBT5551LT1G

ON Semiconductor

MMBT5551LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5551LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 160V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 600mA
Base Part Number MMBT5551
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 225mW
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Max Junction Temperature (Tj) 150°C
VCEsat-Max 0.2 V
Height 1.11mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.032771 $0.032771
500 $0.024096 $12.048
1000 $0.020080 $20.08
2000 $0.018422 $36.844
5000 $0.017217 $86.085
10000 $0.016016 $160.16
15000 $0.015489 $232.335
50000 $0.015230 $761.5
MMBT5551LT1G Product Details

MMBT5551LT1G Description


The MMBT5551LT1G is an NPN Silicon High Voltage Transistor developed for applications that require specific site and control changes. According to the MMBT5551LT1G datasheet, this transistor is PPAP capable and AEC-Q101 qualified. The NPN Bipolar High Voltage Transistor is intended for general-purpose switching applications. The MMBT5551LT1G is packaged in a SOT-23 package, which is also intended for low-power surface mount applications.



MMBT5551LT1G Features


  • Pb?Free Devices are available

  • Collector-Emitter Breakdown Voltage 160 V

  • Miniature SOT-23 Surface Mount Package Saves Board Space>

  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • Pb?Free, Halogen Free/BFR Free and are RoHS Compliant



MMBT5551LT1G Applications


  • Industrial

  • Automotive

  • Switching applications

  • Lower power surface mount applications


Related Part Number

CP591X-2N2907A-CT20
Central Semiconductor Corp
CP591X-2N2907A-CT20
$0 $/piece
BD438STU
ON Semiconductor
BD438STU
$0 $/piece
NST846BF3T5G
ON Semiconductor
NST846BF3T5G
$0 $/piece
BC858W,115
Nexperia USA Inc.
BC858W,115
$0 $/piece
KSC2331YBU
Rochester Electronics, LLC
KSC2331YBU
$0 $/piece
MJW21195G
ON Semiconductor
MJW21195G
$0 $/piece
MJD112G
ON Semiconductor
MJD112G
$0 $/piece
FCX658ATA
Diodes Incorporated
FCX658ATA
$0 $/piece
2DC4617QLP-7B
Diodes Incorporated
2DC4617QLP-7B
$0 $/piece
BCP5216H6327XTSA1
Infineon Technologies
BCP5216H6327XTSA1
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News