2SC5706-TL-H Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 160mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 240mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.As a result, the part has a transition frequency of 400MHz.As a result, it can handle voltages as low as 50V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
2SC5706-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SC5706-TL-H Applications
There are a lot of ON Semiconductor 2SC5706-TL-H applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
