2SB1205T-TL-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 60mA, 3A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.
2SB1205T-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at -5V
2SB1205T-TL-E Applications
There are a lot of ON Semiconductor 2SB1205T-TL-E applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
