2SB1215T-H Overview
This device has a DC current gain of 200 @ 500mA 5V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 150mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.In extreme cases, the collector current can be as low as 3A volts.
2SB1215T-H Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
2SB1215T-H Applications
There are a lot of ON Semiconductor 2SB1215T-H applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
