MJD340T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD340T4G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 hours ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
300V
Max Power Dissipation
1.56W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJD340
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
100μA
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
300V
Frequency - Transition
10MHz
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
3V
hFE Min
30
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.334302
$0.334302
10
$0.315380
$3.1538
100
$0.297528
$29.7528
500
$0.280687
$140.3435
1000
$0.264799
$264.799
MJD340T4G Product Details
MJD340T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Keeping the emitter base voltage at 3V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.This device can take an input voltage of 300V volts before it breaks down.During maximum operation, collector current can be as low as 500mA volts.
MJD340T4G Features
the DC current gain for this device is 30 @ 50mA 10V a collector emitter saturation voltage of 1V the emitter base voltage is kept at 3V the current rating of this device is 500mA
MJD340T4G Applications
There are a lot of ON Semiconductor MJD340T4G applications of single BJT transistors.