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MJD340T4G

MJD340T4G

MJD340T4G

ON Semiconductor

MJD340T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD340T4G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 300V
Max Power Dissipation 1.56W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJD340
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.56W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 300V
Frequency - Transition 10MHz
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 3V
hFE Min 30
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.334302 $0.334302
10 $0.315380 $3.1538
100 $0.297528 $29.7528
500 $0.280687 $140.3435
1000 $0.264799 $264.799
MJD340T4G Product Details

MJD340T4G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Keeping the emitter base voltage at 3V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.This device can take an input voltage of 300V volts before it breaks down.During maximum operation, collector current can be as low as 500mA volts.

MJD340T4G Features


the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is 500mA

MJD340T4G Applications


There are a lot of ON Semiconductor MJD340T4G applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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