2SB1216T-TL-H Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 130MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

2SB1216T-TL-H Features

the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz

2SB1216T-TL-H Applications

There are a lot of ON Semiconductor 2SB1216T-TL-H applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver