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2SC4489T-AN

2SC4489T-AN

2SC4489T-AN

ON Semiconductor

2SC4489T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SC4489T-AN Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case SC-71
Number of Pins 3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2005
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation1W
Pin Count3
Power - Max 1W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 100mA, 1A
Collector Emitter Breakdown Voltage100V
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 6V
hFE Min 140
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:29040 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.359230$0.35923
10$0.338896$3.38896
100$0.319713$31.9713
500$0.301616$150.808
1000$0.284544$284.544

2SC4489T-AN Product Details

2SC4489T-AN Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 5V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 100mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.During maximum operation, collector current can be as low as 2A volts.

2SC4489T-AN Features


the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at 6V

2SC4489T-AN Applications


There are a lot of ON Semiconductor 2SC4489T-AN applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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