2SC4489T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC4489T-AN Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
SC-71
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation
1W
Pin Count
3
Power - Max
1W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
6V
hFE Min
140
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.359230
$0.35923
10
$0.338896
$3.38896
100
$0.319713
$31.9713
500
$0.301616
$150.808
1000
$0.284544
$284.544
2SC4489T-AN Product Details
2SC4489T-AN Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 5V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 100mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.During maximum operation, collector current can be as low as 2A volts.
2SC4489T-AN Features
the DC current gain for this device is 200 @ 100mA 5V the vce saturation(Max) is 400mV @ 100mA, 1A the emitter base voltage is kept at 6V
2SC4489T-AN Applications
There are a lot of ON Semiconductor 2SC4489T-AN applications of single BJT transistors.