MMSS8550-L-TP Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 80mA, 800mA.In the part, the transition frequency is 100MHz.Device displays Collector Emitter Breakdown (25V maximal voltage).

MMSS8550-L-TP Features

the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
a transition frequency of 100MHz

MMSS8550-L-TP Applications

There are a lot of Micro Commercial Co MMSS8550-L-TP applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting