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2SARA41CHZGT116S

  • 2SARA41CHZGT116S
  • 2SARA41CHZGT116S

2SARA41CHZGT116S

2SARA41CHZGT116S

ROHM Semiconductor

2SARA41CHZGT116S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SARA41CHZGT116S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.446000 $0.446
10 $0.420755 $4.20755
100 $0.396938 $39.6938
500 $0.374470 $187.235
1000 $0.353274 $353.274
2SARA41CHZGT116S Product Details

2SARA41CHZGT116S Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.

2SARA41CHZGT116S Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA

2SARA41CHZGT116S Applications


There are a lot of ROHM Semiconductor 2SARA41CHZGT116S applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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