2SARA41CHZGT116S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
2SARA41CHZGT116S Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
2SARA41CHZGT116S Applications
There are a lot of ROHM Semiconductor 2SARA41CHZGT116S applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
