ZXTN2010A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN2010A Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
30 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
60V
Max Power Dissipation
1W
Current Rating
4.5A
Base Part Number
ZXTN2010A
Element Configuration
Single
Gain Bandwidth Product
130MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
210mV @ 200mA, 5A
Collector Emitter Breakdown Voltage
60V
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
4.5A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.918392
$2.918392
10
$2.753200
$27.532
100
$2.597358
$259.7358
500
$2.450338
$1225.169
1000
$2.311640
$2311.64
ZXTN2010A Product Details
ZXTN2010A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at 4.5A in order to achieve high efficiency.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A maximum collector current of 4.5A volts can be achieved.
ZXTN2010A Features
the DC current gain for this device is 100 @ 2A 1V the vce saturation(Max) is 210mV @ 200mA, 5A the emitter base voltage is kept at 7V the current rating of this device is 4.5A
ZXTN2010A Applications
There are a lot of Diodes Incorporated ZXTN2010A applications of single BJT transistors.