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ZXTN2010A

ZXTN2010A

ZXTN2010A

Diodes Incorporated

ZXTN2010A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN2010A Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 60V
Max Power Dissipation 1W
Current Rating 4.5A
Base Part Number ZXTN2010A
Element Configuration Single
Gain Bandwidth Product 130MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 210mV @ 200mA, 5A
Collector Emitter Breakdown Voltage 60V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 4.5A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.918392 $2.918392
10 $2.753200 $27.532
100 $2.597358 $259.7358
500 $2.450338 $1225.169
1000 $2.311640 $2311.64
ZXTN2010A Product Details

ZXTN2010A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at 4.5A in order to achieve high efficiency.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A maximum collector current of 4.5A volts can be achieved.

ZXTN2010A Features


the DC current gain for this device is 100 @ 2A 1V
the vce saturation(Max) is 210mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 4.5A

ZXTN2010A Applications


There are a lot of Diodes Incorporated ZXTN2010A applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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