2SC4488S-AN Overview

DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 6V to gain high efficiency.An input voltage of 100V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 1A volts.

2SC4488S-AN Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V

2SC4488S-AN Applications

There are a lot of ON Semiconductor 2SC4488S-AN applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter