2N5210TFR Overview
In this device, the DC current gain is 200 @ 100μA 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 30MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.Collector current can be as low as 100mA volts at its maximum.
2N5210TFR Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 30MHz
2N5210TFR Applications
There are a lot of ON Semiconductor 2N5210TFR applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
