2SD1628G-TD-H Overview

This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.When VCE saturation is 500mV @ 60mA, 3A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Maximum collector currents can be below 5A volts.

2SD1628G-TD-H Features

the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V

2SD1628G-TD-H Applications

There are a lot of ON Semiconductor 2SD1628G-TD-H applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting