BCX71JLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BCX71JLT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
350mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
BCX71JLT1G Product Details
BCX71JLT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 550mV @ 1.25mA, 50mA.This product comes in a SOT-23-3 (TO-236) device package from the supplier.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BCX71JLT1G Features
the DC current gain for this device is 250 @ 2mA 5V the vce saturation(Max) is 550mV @ 1.25mA, 50mA the supplier device package of SOT-23-3 (TO-236)
BCX71JLT1G Applications
There are a lot of Rochester Electronics, LLC BCX71JLT1G applications of single BJT transistors.