DXT458P5-13 Overview
This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 6mA, 50mA.A constant collector voltage of 300mA is necessary for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A breakdown input voltage of 400V volts can be used.Single BJT transistor comes in a supplier device package of PowerDI? 5.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.When collector current reaches its maximum, it can reach 300mA volts.
DXT458P5-13 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the supplier device package of PowerDI? 5
DXT458P5-13 Applications
There are a lot of Diodes Incorporated DXT458P5-13 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
