30C02CH-TL-E Overview

In this device, the DC current gain is 300 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 850mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 190mV @ 10mA, 200mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A transition frequency of 540MHz is present in the part.In extreme cases, the collector current can be as low as 700mA volts.

30C02CH-TL-E Features

the DC current gain for this device is 300 @ 50mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 190mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
a transition frequency of 540MHz

30C02CH-TL-E Applications

There are a lot of ON Semiconductor 30C02CH-TL-E applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver