BC817K16E6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 170MHz.There is a breakdown input voltage of 45V volts that it can take.Maximum collector currents can be below 500mA volts.
BC817K16E6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K16E6327HTSA1 Applications
There are a lot of Infineon Technologies BC817K16E6327HTSA1 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
