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BULB49DT4

BULB49DT4

BULB49DT4

STMicroelectronics

BULB49DT4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

BULB49DT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation80W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BULB49
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 450V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 4 @ 7A 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 800mA, 4A
Collector Emitter Breakdown Voltage450V
Collector Base Voltage (VCBO) 850V
Emitter Base Voltage (VEBO) 10V
hFE Min 10
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:8991 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BULB49DT4 Product Details

BULB49DT4 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4 @ 7A 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 800mA, 4A.The base voltage of the emitter can be kept at 10V to achieve high efficiency.A maximum collector current of 5A volts is possible.

BULB49DT4 Features


the DC current gain for this device is 4 @ 7A 10V
the vce saturation(Max) is 1.2V @ 800mA, 4A
the emitter base voltage is kept at 10V

BULB49DT4 Applications


There are a lot of STMicroelectronics BULB49DT4 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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