2SB1123T-TD-E Overview

The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.An emitter's base voltage can be kept at -6V to gain high efficiency.There is a transition frequency of 150MHz in the part.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 2A volts can be achieved.

2SB1123T-TD-E Features

a collector emitter saturation voltage of -300mV
the emitter base voltage is kept at -6V
a transition frequency of 150MHz

2SB1123T-TD-E Applications

There are a lot of ON Semiconductor 2SB1123T-TD-E applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface