6685-MMBT3906 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
6685-MMBT3906 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
350mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
6685-MMBT3906 Product Details
6685-MMBT3906 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 40V maximal voltage - Collector Emitter Breakdown.
6685-MMBT3906 Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 400mV @ 5mA, 50mA
6685-MMBT3906 Applications
There are a lot of ON Semiconductor 6685-MMBT3906 applications of single BJT transistors.