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6685-MMBT3906

6685-MMBT3906

6685-MMBT3906

ON Semiconductor

6685-MMBT3906 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

6685-MMBT3906 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 350mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 250MHz
RoHS StatusROHS3 Compliant
In-Stock:1305 items

6685-MMBT3906 Product Details

6685-MMBT3906 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 40V maximal voltage - Collector Emitter Breakdown.

6685-MMBT3906 Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA

6685-MMBT3906 Applications


There are a lot of ON Semiconductor 6685-MMBT3906 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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