BC212BRL1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 2mA 5V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 280MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC212BRL1G Features
the DC current gain for this device is 60 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz
BC212BRL1G Applications
There are a lot of ON Semiconductor BC212BRL1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
