BC212BRL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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BC212BRL1G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
EUROPEAN PART NUMBER
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
350mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
280MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC212
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
280MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
280MHz
Collector Emitter Saturation Voltage
-250mV
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BC212BRL1G Product Details
BC212BRL1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 2mA 5V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 280MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC212BRL1G Features
the DC current gain for this device is 60 @ 2mA 5V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is -100mA a transition frequency of 280MHz
BC212BRL1G Applications
There are a lot of ON Semiconductor BC212BRL1G applications of single BJT transistors.