Welcome to Hotenda.com Online Store!

logo
userjoin
Home

JAN2N4029

JAN2N4029

JAN2N4029

Microsemi Corporation

JAN2N4029 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N4029 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/512
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Max Power Dissipation500mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Reference Standard MIL-19500/512
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Collector Emitter Breakdown Voltage80V
Collector Base Voltage (VCBO) 80V
Turn Off Time-Max (toff) 210ns
Turn On Time-Max (ton) 40ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1092 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$9.83540$983.54

JAN2N4029 Product Details

JAN2N4029 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100mA, 1A.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

JAN2N4029 Features


the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A

JAN2N4029 Applications


There are a lot of Microsemi Corporation JAN2N4029 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

Get Subscriber

Enter Your Email Address, Get the Latest News