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BC33725TFR

BC33725TFR

BC33725TFR

ON Semiconductor

BC33725TFR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC33725TFR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating800mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC337
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage45V
Collector Emitter Saturation Voltage700mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 10V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 4.58mm
Length 4.58mm
Width 3.86mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:19916 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.461906$0.461906
10$0.435760$4.3576
100$0.411094$41.1094
500$0.387825$193.9125
1000$0.365872$365.872

BC33725TFR Product Details

BC33725TFR Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 800mA.Single BJT transistor can take a breakdown input voltage of 45V volts.A maximum collector current of 800mA volts is possible.

BC33725TFR Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA

BC33725TFR Applications


There are a lot of ON Semiconductor BC33725TFR applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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