BCX41E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCX41E6433HTMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
BCX41
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
330mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA 1V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
900mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max)
125V
Current - Collector (Ic) (Max)
800mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.06576
$0.6576
BCX41E6433HTMA1 Product Details
BCX41E6433HTMA1 Overview
This device has a DC current gain of 40 @ 200mA 1V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 900mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 125VV - Maximum voltage.
BCX41E6433HTMA1 Features
the DC current gain for this device is 40 @ 200mA 1V the vce saturation(Max) is 900mV @ 30mA, 300mA a transition frequency of 100MHz
BCX41E6433HTMA1 Applications
There are a lot of Infineon Technologies BCX41E6433HTMA1 applications of single BJT transistors.