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BCX41E6433HTMA1

BCX41E6433HTMA1

BCX41E6433HTMA1

Infineon Technologies

BCX41E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX41E6433HTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number BCX41
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 330mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA 1V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 900mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max) 125V
Current - Collector (Ic) (Max) 800mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.06576 $0.6576
BCX41E6433HTMA1 Product Details

BCX41E6433HTMA1 Overview


This device has a DC current gain of 40 @ 200mA 1V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 900mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 125VV - Maximum voltage.

BCX41E6433HTMA1 Features


the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 900mV @ 30mA, 300mA
a transition frequency of 100MHz

BCX41E6433HTMA1 Applications


There are a lot of Infineon Technologies BCX41E6433HTMA1 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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