BCX41E6433HTMA1 Overview
This device has a DC current gain of 40 @ 200mA 1V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 900mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 125VV - Maximum voltage.
BCX41E6433HTMA1 Features
the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 900mV @ 30mA, 300mA
a transition frequency of 100MHz
BCX41E6433HTMA1 Applications
There are a lot of Infineon Technologies BCX41E6433HTMA1 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver