MJD44H11-1G Overview
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
MJD44H11-1G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
MJD44H11-1G Applications
There are a lot of ON Semiconductor MJD44H11-1G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
