NSS20200LT1G Overview

DC current gain in this device equals 250 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -130mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 200mA, 2A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A transition frequency of 100MHz is present in the part.As a result, it can handle voltages as low as 20V volts.In extreme cases, the collector current can be as low as 2A volts.

NSS20200LT1G Features

the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -130mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

NSS20200LT1G Applications

There are a lot of ON Semiconductor NSS20200LT1G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter