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BC373ZL1G

BC373ZL1G

BC373ZL1G

ON Semiconductor

BC373ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC373ZL1G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2006
JESD-609 Code e1
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureEUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating1A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC373
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.1V @ 250μA, 250mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage1.1V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 12V
hFE Min 8000
Continuous Collector Current 1A
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4297 items

BC373ZL1G Product Details

BC373ZL1G Overview


This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.1V ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 250μA, 250mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.The base voltage of the emitter can be kept at 12V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BC373ZL1G Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz

BC373ZL1G Applications


There are a lot of ON Semiconductor BC373ZL1G applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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