BC373ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC373ZL1G Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
EUROPEAN PART NUMBER
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC373
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.1V @ 250μA, 250mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
1.1V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
12V
hFE Min
8000
Continuous Collector Current
1A
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BC373ZL1G Product Details
BC373ZL1G Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.1V ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.1V @ 250μA, 250mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.The base voltage of the emitter can be kept at 12V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC373ZL1G Features
the DC current gain for this device is 10000 @ 100mA 5V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 1.1V @ 250μA, 250mA the emitter base voltage is kept at 12V the current rating of this device is 1A a transition frequency of 200MHz
BC373ZL1G Applications
There are a lot of ON Semiconductor BC373ZL1G applications of single BJT transistors.