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FJP3305

FJP3305

FJP3305

ON Semiconductor

FJP3305 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP3305 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Base Part Number FJP3305
Power - Max 75W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 19 @ 1A 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 4A
Frequency - Transition 4MHz
In-Stock:3729 items

FJP3305 Product Details

FJP3305 Overview


In this device, the DC current gain is 19 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 1A, 4A.The device exhibits a collector-emitter breakdown at 400V.

FJP3305 Features


the DC current gain for this device is 19 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 4A

FJP3305 Applications


There are a lot of ON Semiconductor FJP3305 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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