FJP3305 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP3305 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Reach Compliance Code
compliant
Base Part Number
FJP3305
Power - Max
75W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
19 @ 1A 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 4A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
4A
Frequency - Transition
4MHz
FJP3305 Product Details
FJP3305 Overview
In this device, the DC current gain is 19 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 1A, 4A.The device exhibits a collector-emitter breakdown at 400V.
FJP3305 Features
the DC current gain for this device is 19 @ 1A 5V the vce saturation(Max) is 1V @ 1A, 4A
FJP3305 Applications
There are a lot of ON Semiconductor FJP3305 applications of single BJT transistors.