BC556ATA Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.An input voltage of 65V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 100mA volts.
BC556ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC556ATA Applications
There are a lot of ON Semiconductor BC556ATA applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
