QSX5TR Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 200mA 2V.A collector emitter saturation voltage of 90mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 180mV @ 50mA, 1A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.As a result, the part has a transition frequency of 360MHz.Input voltage breakdown is available at 12V volts.In extreme cases, the collector current can be as low as 2A volts.

QSX5TR Features

the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 360MHz

QSX5TR Applications

There are a lot of ROHM Semiconductor QSX5TR applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter